Metal-supported SOFCs are believed to have high potential for commercialization due to lower material costs and higher robustness in fabrication and operation. However, the development of the cell is challenged by the metal properties during fabrication, and the necessary lower operating temperatures, while retaining both the energy output and the stability. The metal-supported SOFC design developed at Riso̸ DTU has been optimized to an ASR value of 0.62 Ωcm2 at 650 °C, and a steady degradation rate of 1.0% kh-1 demonstrated for 3000 h on a 16 cm2 active cell level. Additional improvement in the performance has been demonstrated possible with cobalt-based cathode materials in combination with a magnetron sputtered CGO cathode barrier layer. Initial ASR values down to 0.27 Ωcm2 at 650 °C and power densities up to 1.14 Wcm-2 was observed with this design on a 0.5 cm2 active cell level.
Yttria-stabilized zirconia (YSZ) thin films are reactively sputter-deposited by high power impulse magnetron sputtering (HiPIMS) in an industrial setup on porous NiO/YSZ fuel cell anodes. The influence of deposition pressure, peak power and substrate bias on the deposition rate and film morphology is studied. It is seen that depositing at increasing the deposition pressure from ~370 mPa to ~750 mPa results in a 64 % increase in the deposition rate and denser film. Films are deposited at peak power densities ranging from 0.4 kW/cm2 to 1.1 kW/cm2. By increasing the peak power density the degree of ionization degree of both Ar and sputtered metallic species is significantly increased which results in denser films as open column boundaries are removed. The increase in peak power also results in a significant drop in deposition rate. By combining a peak power density of ~0.6 kW/cm2 with the application of -180 V substrate bias voltage a homogenous and essentially columnless coating can be deposited. These results demonstrate HiPIMS deposition is capable of producing dense, YSZ coatings on porous substrates as needed for solid oxide fuel cell application.
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