We demonstrate amplification of a microwave signal by a strongly driven two-level system in a coplanar waveguide resonator. The effect, similar to the dressed-state lasing known from quantum optics, is observed with a single quantum system formed by a persistent current (flux) qubit. The transmission through the resonator is enhanced when the Rabi frequency of the driven qubit is tuned into resonance with one of the resonator modes. Amplification as well as linewidth narrowing of a weak probe signal has been observed. The stimulated emission in the resonator has been studied by measuring the emission spectrum. We analyzed our system and found an excellent agreement between the experimental results and the theoretical predictions obtained in the dressed-state model.
Among patients diagnosed with unresectable metastatic melanoma from 2004 to 2009, patients at later stages had lower median overall survival and higher mortality rates than patients at earlier stages. Limitations of this analysis include the lack of information on disease progression, therapies used, and genetic factors.
The effects of increased CO(2) and temperature on the photosynthetic capacity of Siberian white birch and Japanese white birch (Betula platyphylla Sukatch. and B. platyphylla Sukatch. var. japonica Hara) were measured. Birch seedlings were raised with a CO(2) partial pressure of 36 +/- 0.3 Pa (i.e., ambient) or 70 +/- 0.6 Pa at day/night temperatures of either 30/16 degrees C or 26/12 degrees C. Siberian birch leaves were smaller and thicker than Japanese birch leaves. Water use efficiency and nitrogen use efficiency of Siberian birch grown in the CO(2)-enriched air were higher than those of Japanese birch. Both species showed a physiological adjustment to the growth CO(2) partial pressure. Carboxylation efficiency and quantum yield of both species grown in CO(2)-enriched air were lower than those of seedlings grown in ambient CO(2). The adaptation of Siberian and Japanese birch to elevated CO(2) and temperature are discussed in relation to predicted climate change.
An ultra-low-noise one-stage SiGe heterojunction bipolar transistor amplifier was designed for cryogenic temperatures and a frequency range of 10 kHz-100 MHz. A noise temperature T(N) ≈ 1.4 K was measured at an ambient temperature of 4.2 K at frequencies between 100 kHz and 100 MHz for a source resistance of ~50 Ω. The voltage gain of the amplifier was 25 dB at a power consumption of 720 μW. The input voltage noise spectral density of the amplifier is about 35 pV/√Hz. The low noise resistance and power consumption makes the amplifier suitable for readout of resistively shunted DC SQUID magnetometers and amplifiers.
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