In order to grow high-quality ZnTe epilayers on (100) GaAs substrates by improved hot wall epitaxy (HWE), the optimum growth condition including the reservoir temperature has been determined by the full-width at half-maximum (FWHM) of the four-crystal rocking curve and the low temperature photoluminescence (PL). Under the determined optimum growth condition, ZnTe epilayers with thickness of 0.7-24.8 mm were grown for studying the effect of the thickness on the crystalline quality. The PL and FWHM values indicated that the quality of ZnTe epilayers was significantly improved when increasing their thickness up to 6 mm. The narrowest FWHM value of 66 arcsec was obtained on an epilayer with 13 mm thickness. Meanwhile, the typical PL spectrum showed the strongly split free exciton emissions and very weak deep band emissions. These results show that the ZnTe epilayers are of high quality.

In order to grow high-quality ZnTe epilayers on (100) GaAs substrates by improved hot wall epitaxy (HWE), the optimum growth condition including the reservoir temperature has been determined by the full-width at half-maximum (FWHM) of the four-crystal rocking curve and the low temperature photoluminescence (PL). Under the determined optimum growth condition, ZnTe epilayers with thickness of 0.7-24.8 mm were grown for studying the effect of the thickness on the crystalline quality. The PL and FWHM values indicated that the quality of ZnTe epilayers was significantly improved when increasing their thickness up to 6 mm. The narrowest FWHM value of 66 arcsec was obtained on an epilayer with 13 mm thickness. Meanwhile, the typical PL spectrum showed the strongly split free exciton emissions and very weak deep band emissions. These results show that the ZnTe epilayers are of high quality.