Polyurethane nanocomposites reinforced with organoclay or nanosilica were prepared by dispersing the filler during polymerization. The modulus and thermal stability of polyurethane were enhanced with the addition of fillers and the effect was more pronounced with organoclay than with nanosilica. The crystallization and damping behaviors showed that the mobility of polyurethane chain is restricted by the filler, and the effect was more evident with organoclay.

As cell size shrinks in NAND Flash memory, assuring adequate reliability characteristics is getting difficult due to the sensitivity of Flash cell against small process changes. Especially, it is still unclear how the combination of mechanical stresses encapsulating the cell structure affects the reliability characteristics. In this paper, we present our results on how to improve reliability with optimizing mechanical stress in active and interpoly dielectrics (IPD) thickness, and confirmed the results through various simulations and test methods on 41nm NAND technology. Hereafter, we need to fully confirm the ISO and IPD beyond 3x nm technology node.

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