A graphene bilayer in a transverse magnetic field has a set of Landau levels with energies E = ± N (N + 1)ℏω * c where ω * c is the effective cyclotron frequency and N = 0, 1, 2, ... All Landau levels but N = 0 are four times degenerate counting spin and valley degrees of freedom. The Landau level N = 0 has an extra degeneracy due to the fact that orbitals n = 0 and n = 1 both have zero kinetic energies. At integer filling factors, Coulomb interactions produce a set of broken-symmetry states with partial or full alignement in space of the valley and orbital pseudospins. These quantum Hall pseudo-ferromagnetic states support topological charged excitations in the form of orbital and valley Skyrmions. Away from integer fillings, these topological excitations can condense to form a rich variety of Skyrme crystals with interesting properties. We study in this paper different crystal phases that occur when an electric field is applied between the layers. We show that orbital Skyrmions, in analogy with spin Skyrmions, have a texture of electrical dipoles that can be controlled by an in-plane electric field. Moreover, the modulation of electronic density in the crystalline phases are experimentally accessible through a measurement of their local density of states 73.22.Gk,78.70.Gq

A proof of concept for high speed near-field imaging with sub-wavelength resolution using SLM is presented. An 8 channel THz detector array antenna with an electrode gap of 100 µm and length of 5 mm is fabricated using the commercially available GaAs semiconductor substrate. Each array antenna can be excited simultaneously by spatially reconfiguring the optical probe beam and the THz electric field can be recorded using 8 channel lock-in amplifiers. By scanning the probe beam along the length of the array antenna, a 2D image can be obtained with amplitude, phase and frequency information.

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We investigate the ultrafast photoconductivity and charge-carrier transport in thermally annealed Fe-implanted InGaAs/InP films using time-resolved terahertz spectroscopy. The samples were fabricated from crystalline InGaAs films amorphized with Fe ions implantation. The rapid thermal annealing of the InGaAs layer induces solid recrystallization through the formation of polycrystalline grains whose sizes are shown to increase with increasing annealing temperature within the 300-700 • C range. Based on the influence of the laser fluence, the temporal profile of the time-resolved photoconductivity was reproduced using a system of rate equations that describe the photocarrier dynamics in terms of a capture/recombination mechanism. For annealing temperatures below 500 • C, the capture time is found to be less than 1 ps while the recombination time from the charged states did not exceed 5 ps. However, for higher annealing temperatures, the capture and the recombination times show a continuous increase, reaching 7.1 ps and 1 ns respectively, for the film annealed at 700 • C. Frequency-dependent photoconductivity curves are analyzed via a modified Drude-Smith model that considers a diffusive restoring current and the confining particles' sizes. Our results demonstrate that the localization parameter of the photocarrier transport model is correlated to the polycrystalline grain size. We also show that a relatively high effective mobility of about 2570 cm 2 V −1 s −1 is preserved in all these Fe-implanted InGaAs films.

No abstract