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Compositional dependence of the conduction-band discontinuity ΔEc in InxGa1−xAs/In0.52Al0.48As pseudomorphic heterostructures has been measured as a function of InAs mole fraction over the range of 0.44≤x≤0.64 using both current-versus-voltage-versus-temperature and capacitance-versus-voltage measurements on semiconductor-insulator-semiconductor structures. The results show a monotonic increase of effective ΔEc with InAs mole fraction x according to ΔEc≊0.384+0.254x for x≤0.54 and an abrupt shift to ΔEc≊0.344+0.487x for x≥0.58. The effects of the conduction-band nonparabolicity and the lattice strain on the Fermi potential have been taken into account in deducing ΔEc from the measured barrier height across the InxGa1−xAs/In0.52Al0.48As heterojunction.