This article reports on the study of microstructure and dislocation of InN films using high resolution x-ray diffraction grown on sapphire (0001) both by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). The mosaic tilt, twist, and correlation lengths of InN films are determined by using symmetrical and asymmetrical reflections as well as reciprocal space mapping. Deducing from these results, MBE-grown InN film exhibits the edge-type dislocations of 4.0×109 cm−2, which is about ten times higher than the density of screw-type dislocations. In MOCVD-grown InN sample, the edge-type dislocations density is as high as 2.1×1010 cm−2, and the screw-type dislocations density is 1.3×109 cm−2. They indicate that edge type is the predominant dislocation type in the InN films. By comparing the reported transmission electron microscopy results, the accuracy of evaluation for the dislocation density using the mosaic model is proved.

Erratum: "Microstructure and dislocation of epitaxial InN films revealed by high resolution x-ray diffraction" †J.