GaAs samples were implanted with tellurium at room temperature or at 150 °C and annealed to 750 °C with an SiO2 or Si3N4 protective layer. The highest electron concentrations and brightest photoluminescence were obtained for the hot implants with a Si3N4 protective layer.

No abstract

Orientation effects on planar GaAs Schottky barrier field effect transistors (MESFET’s) have been found. Device characteristics of FET’s parallel to both [110] directions and both [100] directions are compared. Dependence of the characteristics on gate length has been measured for FET’s oriented in two perpendicular [110] directions. Preferential lateral diffusion is proposed to be the reason underlying these phenomena.

No abstract

We have investigated the lattice disorder produced in Si by 200-keV B implantations using the standard channeling technique. We found the disorder production strongly temperature-dependent from about −85°C to room temperature. The annealing of the residual disorder present after such a B implantation takes place at higher temperatures. Our results indicate that the nature of the lattice disorder produced in Si by low dose ion implantation depends on the mass of the ion implanted.