Atomic layer deposition has been employed to grow nanowires composed of ZnSe/CdSe superlattices. Growth of the nanowires was initiated using gold nanoparticles and the vapor-liquid-solid mechanism. High-resolution transmission electron microscopy shows that these structures are single crystals and the phase of alternating layers of ZnSe and CdSe is zinc blende. The (111) planes of ZnSe and CdSe are oriented at 60°.
Commonly known in macroscale mechanics, buckling phenomena are now also encountered in the nanoscale world as revealed in today's cutting-edge fabrication of microelectronics. The description of nanoscale buckling requires precise dimensional and elastic moduli measurements, as well as a thorough understanding of the relationships between stresses in the system and the ensuing morphologies. Here, we analyze quantitatively the buckling mechanics of organosilicate fins that are capped with hard masks in the process of lithographic formation of deep interconnects. We propose an analytical model that quantitatively describes the morphologies of the buckled fins generated by residual stresses in the hard mask. Using measurements of mechanical properties and geometric characteristics, we have verified the predictions of the analytical model for structures with various degrees of buckling, thus putting forth a framework for guiding the design of future nanoscale interconnect architectures.
27Al MAS NMR is shown to be a valuable tool in probing the coordination of aluminum in MgAl2O4 spinels, enabling the extent of Mg/Al order in the structure to be determined directly. From the relative intensities of the NMR peaks, assigned to octahedrally and tetrahedrally coordinated aluminum, the inversion parameter, i, was calculated to be 0.36±0.03 for a MgAl2O4 spinel synthesized at 1400 °C, and 0.12±0.06 for a natural spinel.
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