We have developed a radiation-hardened, highly linear, wideband, low-noise amplifier (LNA) with programmable gain to serve as the front-end of a plasma-wave instrument for satellite-based electric-field measurements of very low frequency (VLF) phenomena in the Van Allen radiation belts. Fabricated in a commercial 0.25-m silicon-germanium BiCMOS process, this ASIC leverages radiation-hardness-by-design techniques at the topological, implementation, and layout levels to maintain 75-dB spurious-free dynamic range (SFDR) over nearly four decades of frequency, from 100 Hz to 1 MHz, for both proton and -ray total ionizing dose (TID) exposures up to 1000 krad(Si). Single-event effect (SEE) testing via pulsed laser confirms negligible latchup sensitivity and suppression of single-event transients(SETs) at the output for beam energy LET equivalents in excess of 100 MeV-cm 2 /mg in even the most sensitive regions of the die.