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In this paper, a numerical onedimensional steady-stke analysis of forward-biased diode structures based on direct-gap semiconductors is presented. The model used in this study is based on numerical solution of the set of fundamental equations for semiconductors with boundary conditions on contacts. The continuity equations for electrons and holes are modified to take into account the carrier generation due to band-toband recombination radiation in the n-base and p+-emitter regions. The abrupt junctions in a p +-n-n +-structure and theoretical band-to-band recombination radiation spectra are assumed. Results of calculations on GaAs are given.

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