In order to compensate for the loss of performance when scaling resonant sensors down to NEMS, it proves extremely useful to study the behavior of resonators up to very high displacements and hence high nonlinearities. This work describes a comprehensive nonlinear multiphysics model based on the Euler-Bernoulli equation which includes both mechanical and electrostatic nonlinearities valid up to displacements comparable to the gap in the case of an electrostatically actuated doubly clamped beam. Moreover, the model takes into account the fringing field effects, significant for thin resonators. The model has been compared to both numerical integrations and electrical measurements of devices fabricated on 200 mm SOI wafers; it shows very good agreement with both. An important contribution of this work is the provision for closed-form expressions of the critical amplitude and the pull-in domain initiation amplitude including all nonlinearities. This model allows designers to cancel out nonlinearities by tuning some design parameters and thus gives the possibility to drive the resonator beyond its critical amplitude. Consequently, the sensor performance can be enhanced to the maximum below the pull-in instability, while keeping a linear behavior.

A reflectarray element with electronic phase control implemented by ohmic MEMS switches is characterized and validated in the X-band. The proposed element is based on two patches aperture-coupled to a microstrip network with a common delay line, forming a sub-array, in order to reduce both cost and manufacturing complexity in large reflectarrays. The electrical length of the line can be modified through the inclusion of a series switch between different segments of the microstrip line. The ohmic electrostatic switch has been designed for RF applications and manufactured on a coplanar line. The transition between the coplanar line of the MEMS and the microstrip delay line has been implemented using gold wires which have been bonded to the printed pads. This connection leads to a high impedance line. The MEMS switches have been characterized using reflection and transmission measurements on microstrip lines for deducing an equivalent circuit, which has been used in the validation of the gathered element with electronic phase control measured using waveguide simulator. The same approach has been applied to evaluate a 2-bit reflectarray element.

International audienceA 60 GHz cavity-backed antenna array integrated on high-resistivity silicon is demonstrated. The antenna design makes use of Through-Silicon-Vias (TSV), silicon micromachining, and wafer-to-wafer bonding to meet the bandwidth and radiation gain requirements for short-range multi-Gbps communications. The fabrication process is presented. Simulated and experimental results show that the antenna element covers easily the 57–66 GHz standard band with good impedance matching and more than 5 dBi of gain. Several fixed-beam four-element antenna arrays demonstrate the capabilities for beam-steering across a range up to ±60°