No abstract

Thick film resistors made of typical ruthenate pastes on various dielectrics change their properties. The properties of such resistors, fabricated on the TiO + glass dielectric, have been evaluated in this paper. The usability of the structures of the type conductor-dielectric-resistor for the construction of temperature sensors has been determined. A practical solution for the temperature sensor, in the form of an RC network with distributed parameters, together with a circuit for the conversion of temperature into frequency has been presented.

An analysis is made of the low-frequency characteristics of the permittivityε′and of tanδof a thick-film insulator containing rutile grains bonded with an amorphous glass. The appearance of dielectric relaxation associated with a maximum of tanδ, as well as characteristic Debye dispersions of the electric permittivity is observed. The relaxation time does not depend on the rutile concentration in the dielectric. An equivalent circuit describing the behaviour of a capacitor with such an insulator in the low frequency range is suggested. The experimental results are shown to be consistent with an analysis based on the assumption that a titanium ion relaxation process occurs in the rutile grains. In normal ambient conditions the influence of this kind of polarization disappears at frequencies higher than 102Hz;ε′and tanδthen change insignificantly and the value of tanδis conditioned by the hopping mechanism of conductivity in the glass and in rutile.

The paper presents a comparative analysis of the properties of ruthenate resistor layers produced on alumina substrates and on dielectric layers previously deposited on them. The effect of dielectric type and the peak firing temperature of ruthenate layers upon the value of their resistance and TCR (temperature coefficient of resistance) has been investigated. The reproducibility and stability of these parameters have been evaluated.