In this study, the effect of Ag or Sb addition on the thermoelectric properties of PbTe including the Seebeck coefficient, the electrical resistivity, and the thermal conductivity, was studied in the temperature range from 323 to 723 K. The major carriers in the Ag-doped and the Sb-doped PbTe are holes and electrons, respectively. A degenerate semiconductor behavior in the electrical transport properties was observed in the Ag-doped, whereas the semi-metallic in the Sb-doped. It was suggested from the results of the Hall effect measurement and the Seebeck coefficient that the effective mass was significantly altered by the Sb-doping. The maximum dimensionless figure of merit, ZT, of Pb1−xAgxTe and Pb1−xSbxTe (x=0.1) alloys showed 0.27 and 0.62 at 723 K, respectively. Based on the analysis of the Seebeck coefficient of the Ag or the Sb-doped PbTe, the interaction between Ag and Sb in PbTe, as expected in the AgPbmSbTem+2 (LAST-m), may be supposed.

Effect of Sn doping on the thermoelectric properties of ErNiSb-based p -type half-Heusler compound Appl. Phys. Lett. 91, 062115 (2007); 10.1063/1.2769398 Room-temperature anisotropic, thermoelectric, and electrical properties of n -type ( Bi 2 Te 3 ) 90 ( Sb 2 Te 3 ) 5 ( Sb 2 Se 3 ) 5 and compensated p -type ( Sb 2 Te 3 ) 72 ( Bi 2 Te 3 ) 25 ( Sb 2 Se 3 ) 3 semiconductor alloysIn this study, the thermoelectric properties of AgPb m SbTe m+2 m = 12, 16,18,20,22, and 26͒, including the Seebeck coefficient, the electrical resistivity, and the thermal conductivity, were studied in the temperature range from 323 to 773 K. The Seebeck coefficient and the electrical resistivity exhibited the behavior of a degenerate semiconductor. The measured results of the carrier concentration supported the conclusions of the electrical transport properties. The lowest electrical resistivity and the thermal conductivity were observed, which leads to the best thermoelectric performance in LAST-18 and the dimensionless figure of merit ZT value of 0.8 at 773 K.