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On the basis of a narrow peaks (NP) model for the 4f-derived density of states (DOS) near the Fermi energy proposed by us earlier, we present a detailed description of the temperature dependences of the contribution of Ce f-states to the electrical resistivity, thermoelectric power, magnetic susceptibility, and electronic contribution to the specific heat for СеNi. It is shown that the dependences of the above mentioned characteristics in a wide temperature range are well described on the basis of a single narrow peak of Lorentzian shape, assuming temperature dependence of the peak parameters. At low temperatures (T < 20 K) the peak parameters are consistent with the corresponding parameters of the 4f DOS in the Anderson model for Kondo systems with strong orbital degeneracy of f-states at the characteristic temperature T K ≈ 330 K. At higher temperatures (T > 50 K) the best correspondence of the model to the experimental data was achieved considering a drastic reduction (collapse) by ~50 % of the width of the narrow peak for the DOS in a temperature range near T ≈ Θ D = 115 K (Θ D is the Debye temperature). Rare earth compounds / Electronic structure of metals and alloys / Electronic transport / Kondo effect