Charge-trap flash- (CTF) memory structures have been fabricated by employing IrO2 nanodots (NDs) grown by atomic-layer deposition. A band of isolated IrO2NDs of about 3 nm lying almost parallel to Si/SiO2 interface is confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy. The memory device with IrO2NDs shows much larger capacitance–voltage (C–V) hysteresis and memory window compared with the control sample without IrO2NDs. After annealing at 800 °C for 20 min, the ND device shows almost no change in the width of C–V hysteresis and the ND distribution. These results indicate that the IrO2NDs embedded in SiO2 can be utilized as thermally stable, discrete charge traps, promising for metal oxide-ND-based CTF memory devices.

Liquid crystal molecules with a new fluoro‐isothiocyanate moiety were synthesized. They showed remarkably high TNI (>190 °C), wide mesophase range of 170 °C, high dielectric anisotropy (>14) and high optical anisotropy (>0.28). New LC Mixtures of the high TNI (>85 °C) was blended with the novel fluoroisothiocyanate containing LC molecules, phenylcyclohexanes, bicyclohexanes and ester compounds. The LC mixtures show a fast speed (<10ms) of the below one frame rate in 17″ WXGA panel.