No abstract

Photoreflectance (PR) spectra are measured at room temperature for energies in the vicinity of the E0 critical point for doped GaAs/SI‐GaAs structures. In the analysis of the obtained spectra the assumption that the PR signal is created due to the internal electric field in both surface and interface regions is verified. In the calculation procedure dispersion relations (Kramers‐Kronig analysis) are used for the PR spectra of heavily doped epilayers. In this case the possibility of very precise surface‐interface distance determination is suggested.