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Data are presen$ed op the inclusive production of 'II-k, p, and p for KS, and protons iicident on nuclear TI*, targets at 100 GeV. The results cover the kinematic range 30.5 P.sTEE ",,eIL;ved for Pt= 0.3 and 0.5 GeV/c. A-dependence of the invariant cross sections exhibits remarkable simplicity, which does not naturally. follow from current models of particle production. The results show that the hypothesis of limiting fragmentation can be extended to include collisions with nuclei.

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The Gamma Ray Observatory (GRO) is currently planned for a launch from the space shuttle in 1990. After the long hiatus in high-energy gamma-ray astronomy since the end of the COS-B mission in 1982, the Soviet missions Granat and Gamma-1 and the NASA mission GRO will resume observations in the energy range from below 100 keV and extending to above 10 GeV. GRO will carry four instruments designed to cover this range of over five decades in photon energy. It is planned to perform a complete sky survey above 1 MeV in the first year of the GRO mission. Data from this survey will be used to study galactic and extragalactic sources of gamma radiation as well as the galactic and extragalactic diffuse emissions. Additionally, measurements of gamma ray bursts will be performed. The angular and spectral resolution of the GRO instruments is significantly improved with respect to previous experiments. The sensitivity for point sources will be better by an order of magnitude, and the location of strong, high energy sources will be determined to about 0.1 ~ ~ After a brief description of the complement of GRO instruments, a detailed discussion of the high-energy telescope EGRET, its design and scientific objectives, is presented in this review.

Special test structures fabricated with three different CMOS processes were used to investigate the effect of elevated temperature on single-particle latchup. The latchup threshold was strongly affected by contact geometry, and its temperature dependence is consistent with a model based on triggering of the vertical parasitic transistor. Threshold LET values decreased by about a factor of 2.5 at 125 C relative to room temperature values for all three processes. Saturation cross sections exceeded the isolation well area for the two bulk processes because of diffused charge. Laser studies showed that latchup could be triggered by strikes outside the isolation well, consistent with the diffused charge mechanism. These same mechanisms were consistent with measurements of the latchup cross section of a static CMOS RAM.