Bi(2) Te(3) nanowires are of significant interest for two fields: nanostructured thermoelectrics and topological insulators. The vapor-liquid-solid method is employed in combination with annealing in a Te atmosphere, to obtain single-crystalline Bi(2) Te(3) nanowires with reproducible electronic transport properties (electrical conductivity and Seebeck coefficient) that are close to those of intrinsic bulk Bi(2) Te(3) .

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Articles you may be interested inEffect of carrier recombination on ultrafast carrier dynamics in thin films of the topological insulator Bi2Se3

Recently, it has been theoretically predicted that Sb 2 Te 3 and related materials are 3D topological insulators, a phase of matter that has a bulk bandgap and gapless electronic surface states protected by time-reversal symmetry. We report on low temperature magnetoresistance measurements on single crystalline Sb 2 Te 3 nanowires with different cross sectional areas and high surface-to-volume ratios, synthesized via catalytic growth. The observation of Aharonov-Bohm oscillations and weak antilocalization indicates the presence of topological surface states. V