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Copper nitride(Cu33N) thin films with nano-crystalline were deposite d on glass substrates at a temperature of 100℃ by DC magnetron sputtering with a columnar target. The structure of the Cu33N thin films was characterized by x-ray diffraction, x-ray photoelectron spectroscopy and atomic force microsco py. The results indicate that Cu33N thin films are composed of nanome ter grains with a cu bic crystal structure of anti-ReO33 type. The films have a uniform s mooth surf ace with only a roughness(Raa) of 17nm. The binding energy peaks of Cu2 p3/23/2, Cu2p1/21/2 and N1s were at 9327, 9527 and 3999eV respecti vely, and spin-orbit coupling energy gap of Cu2p was 20eV. The film thickness was determined by a profile step scanner, and its resistivity was measured usin g the four-probe method. The deposition rate and resistivity were found to chan ge with the nitrogen content.