With the complexity and integration of integrated chips increasing, existing integrated circuits electromagnetic interference techniques using metallic probes cannot meet the emerging demand at single die level or wafer level, which requires micron spatial resolution and ultraweak invasiveness. In this article, we developed a non-invasive near field probe in the fiber format using nitrogen-vacancy center in diamond, which was attached to the tip of fiber as microwave B-field sensing element. Subsequently, we applied the fiber diamond probe to near field scanning of a low noise amplifier chip and a power amplifier chip. Through numerical simulation, we find that the surface field strength is proportional to current density at chip surface, thus this probe can be used as a current imaging technique at microwave frequency.

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