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Considerable research is being carried out in the area of wide band gap semiconductor materials for light emission in the 300–400 nm spectral range. Current materials being used for such devices are typically based on II–VI and III‐nitride compounds and variants thereof. However, one of the major obstacles to the successful fabrication of III‐N devices is lattice mismatch‐induced high dislocation densities for epitaxially grown layers on non‐native substrates. γ‐CuCl is a direct bandgap material and an ionic wide bandgap I–VII semiconductor with a room temperature free exciton binding energy of ∼190 meV (compared to ∼25 meV and ∼60 meV for GaN and ZnO, respectively) and has a band gap of 3.4 eV (λ ∼ 366 nm). The lattice constant of γ‐CuCl (0.541 nm) is closely matched to that of Si (0.543 nm). This could, in principle, lead to the development of optoelectronic systems based on CuCl grown on Si. Research towards this end has successfully yielded polycrystalline γ‐CuCl on Si(100) and Si(111) using vacuum‐based deposition techniques [1]. We report on developments towards achieving single crystal growth of CuCl from solution via Liquid Phase Epitaxy (LPE) based techniques. Work is being carried out using alkali halide flux compounds to depress the liquidus temperature of the CuCl below its solid phase wurtzite‐zincblende transition temperature (407 °C [2]) for solution based epitaxy on Si substrates. Initial results show that the resulting KCl flux‐driven deposition of CuCl onto the Si substrate has yielded superior photoluminescence (PL) and X‐ray excited optical luminescence (XEOL) behavior relative to comparitively observed spectra for GaN or polycrystalline CuCl. This enhancement is believed to be caused by an interaction between the KCl and CuCl material subsequent to the deposition process, perhaps involving a reduction in Cl vacancy distributions in CuCl. This paper presents a detailed discussion of a CuCl LPE growth system as well as the characterization of deposited materials using X‐ray diffraction (XRD), room temperature and low temperature PL, and XEOL. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Photoluminescence study of magnetic spin clusters and their temperature evolution in Cd0.70Mn0.30Te spinglass compound J. Appl. Phys. 112, 093715 (2012) Excitonic luminescence in two-dimensionally confined layered sulfide oxides Appl. Phys. Lett. 101, 191901 (2012) Excitons imaging in hybrid organic-inorganic films J. Appl. Phys. 112, 093105 (2012) Bound and anti-bound biexciton in site-controlled pyramidal GaInAs/GaAs quantum dots Appl. Phys. Lett. 101, 191101 (2012) Vanadium bound exciton luminescence in 6H-SiC Appl. Phys. Lett. 101, 151903 (2012) Additional information on J. Appl. Phys. CuCl thin films grown on (100) Si by thermal evaporation are studied using reflectance spectroscopy. The reflectance spectra in the near UV spectral range close to the CuCl bandgap are modeled using a dielectric response function based on an exciton-polariton response with various models involving dead layers and reflected waves in the thin film. The exciton-polariton structure obtained is compared to other studies of bulk CuCl crystals. These different models are analyzed using a matrix-based approach and they yield theoretical spectra of reflected intensity. The fits provide parameter values which can be compared to bulk data known for CuCl and provide a nondestructive means of quantitative analysis of CuCl thin films. The best models are shown to match the experimental data quite well, with the closest fits produced when thin film front and rear interfaces are included. This model also accurately simulates the Fabry-Perot fringes present at energies lower than the Z 3 free exciton position in CuCl (at 3.272 eV). V C 2012 American Institute of Physics. [http://dx

CuCl thin films grown on (100) Si by thermal evaporation are studied by means of low temperature photoluminescence (PL) and reflectance spectroscopies. Spatially and wavelength resolved room temperature cathodoluminescence (CL) imaging of the surface of the CuCl samples in a scanning electron microscope (SEM) has also been performed. The reflectance spectra are modeled using a dielectric response function with various models involving dead layers and reflected waves in the thin film and the exciton-polariton structure obtained is compared to other studies of CuCl. The modeling is shown to match the experimental data quite well when a dead layer is included at the air/CuCl and CuCl/Si interfaces. Some inconsistencies between the CL spectra and those measured by PL and reflectance have been observed. The effects of changing the accelerating voltage of the probe from 10 keV to the range 1-5 keV to allow depth analysis of the CL are reported, in order to pinpoint the spatial origin of the CL emission within the thin film.

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