State-of-the-art models used for drift-diffusion simulations of organic bulk heterojunction solar cells based on band transport are not capable of reproducing the voltage dependence of dark current density and carrier concentration of such devices, as determined by current-voltage and charge-extraction measurements. Here, we show how to correctly reproduce this experimental data by including an exponential tail of localized states into the density of states for both electrons and holes, and allowing recombination to occur between free charge carriers and charge carriers trapped in these states. When this recombination via tail states is included, the dependence of charge-carrier concentration on voltage is distinctly different from the case of band-to-band recombination and the dependence of recombination current on carrier concentration to a power higher than 2 can be explained.

Recent simulations of the efficiency of polymer/fullerene solar cells as a function of mobility predicted finite optimum mobilities due to a decrease in open circuit voltage for higher mobilities. We explain this decrease in open circuit voltage with two features of the commonly used model, namely, infinite surface recombination and an integration over a distribution of separation distances of electron and hole in a charge transfer state at the interface between donor and acceptor molecules. Especially, the assumption of a variable electron/hole pair separation at the interface has a considerable influence on the open circuit voltage.

We report on a plasmonic light-trapping concept based on localized surface plasmon polariton induced light scattering at nanostructured Ag back contacts of thin-film silicon solar cells. The electromagnetic interaction between incident light and localized surface plasmon polariton resonances in nanostructured Ag back contacts was simulated with a three-dimensional numerical solver of Maxwell's equations. Geometrical parameters as well as the embedding material of single and periodic nanostructures on Ag layers were varied. The design of the nanostructures was analyzed regarding their ability to scatter incident light at low optical losses into large angles in the silicon absorber layers of the thin-film silicon solar cells.

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We introduce a model for charge separation in bulk heterojunction solar cells that combines exciton transport to the interface between donor and acceptor phases with the dissociation of the bound electron/hole pair. We implement this model into a standard semiconductor device simulator, thereby creating a convenient method to simulate the optical and electrical characteristics of a bulk heterojunction solar cell with a commercially available program. By taking into account different collection probabilities for the excitons in the polymer and the fullerene, we are able to reproduce absorptance, internal and external quantum efficiency, as well as current/voltage curves of bulk heterojunction solar cells. We further investigate the influence of mobilities of the free excitons as well as the mobilities of the free charge carriers on the performance of bulk heterojunction solar cells. We find that, in general, the highest efficiencies are achieved with the highest mobilities. However, an optimum finite mobility of free charge carriers can result from a large recombination velocity at the contacts. In contrast, Langevin-type of recombination cannot lead to finite optimum mobilities even though this mechanism has a strong dependence on the free carrier mobilities.