This paper presents an F-band integrated standing wave detector for complex reflection measurements. The complex reflection coefficient is derived from a standing wave, measured by 312 power detectors coupled from underneath a transmission line, taking the loss of the transmission line into account. For the proposed method of reflection coefficient derivation, the trade-off between TL-length and number of probes is shown through simulation. The standing wave detector is fabricated in 40-nm CMOS process and measurements shows complex reflection coefficient for input powers down to -20 dBm at 120 GHz, while only consuming 112 µW of DC-power. In measurements the complex reflection detection is shown for multiple impedances achieving a absolute phase error of 8.3 • with a sigma of 1.5 • and a magnitude error of 0.33 dB with a sigma of 0.21 dB compared to a VNA reference measurement.

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This paper presents a quadrature phase detector in 28nm CMOS, which is used to perform a differential phase measurement between two dielectric waveguides at 120 GHz. The phase detector has on-chip quadrature generation with a measured maximum quadrature error of 2 • over a 20 GHz bandwidth. The quadrature phase detector achieves a maximum uncalibrated phase error of 11 •. The proposed waveguide sensing system allows for both intrinsic measurements, in which the dielectric waveguide acts as a sensor, and extrinsic measurements, where the dielectric waveguide acts as a guided channel and antenna. Intrinsic sensing is demonstrated by a temperature measurement and extrinsic with a non-destructive test of a 3Dprinted polymer sample.