No abstract

PACS 73.61. Le, 78.30.Hv, 79.60.Bm Boron nitride thin films deposited with tris(dimethyl)aminoborane on Si(001) at 800 °C have been characterized by IR spectroscopy, X-ray photoelectron spectroscopy, ellipsometry and capacitance voltage measurements. A low carbon contamination is found. Films had a refraction index of ≈1.6-1.7 as measured by ellipsometry. The C-V measurements have shown that 5 nm thick BN films had good insulating properties, with a dielectric constant of 4-5 at 1 MHz frequency. This in turn be useful as gate insulator in MIS wide-band gap III-N devices.