The use of organic materials presents a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. Commercialization of this technology requires reduction in manufacturing costs by exploiting inexpensive low-temperature deposition and patterning techniques, which typically lead to lower device performance. We report a low-cost approach to control the microstructure of solution-cast acene-based organic thin films through modification of interfacial chemistry. Chemically and selectively tailoring the source/drain contact interface is a novel route to initiating the crystallization of soluble organic semiconductors, leading to the growth on opposing contacts of crystalline films that extend into the transistor channel. This selective crystallization enables us to fabricate high-performance organic thin-film transistors and circuits, and to deterministically study the influence of the microstructure on the device characteristics. By connecting device fabrication to molecular design, we demonstrate that rapid film processing under ambient room conditions and high performance are not mutually exclusive.

Organic semiconductors are emerging as a viable alternative to amorphous silicon in a range of thin‐film transistor devices. With the possibility to formulate these p‐type materials as inks and subsequently print into patterned devices, organic‐based transistors offer significant commercial advantages for manufacture, with initial applications such as low performance displays and simple logic being envisaged. Previous limitations of both air stability and electrical performance are now being overcome with a range of both small molecule and polymer‐based solution‐processable materials, which achieve charge carrier mobilities in excess of 0.5 cm2 V−1 s−1, a benchmark value for amorphous silicon semiconductors. Polymer semiconductors based on thienothiophene copolymers have achieved amongst the highest charge carrier mobilities in solution‐processed transistor devices. In this Progress Report, we evaluate the advances and limitations of this class of polymer in transistor devices.

The buried interface composition of polymer-fullerene blends is found by near-edge x-ray absorption fine structure spectroscopy to depend on the surface energy of the substrate upon which they are cast. The interface composition determines the type of charge transport measured with thin film transistors. These results have implications for organic photovoltaics device design and the use of transistors to evaluate bulk mobility in blends.

We have studied charge injection across the metal/organic semiconductor interface in bottomcontact poly(3-hexylthiophene) (P3HT) field-effect transistors, with Au source and drain electrodes modified by self-assembled monolayers (SAMs) prior to active polymer deposition. By using the SAM to engineer the effective Au work function, we markedly affect the charge injection process. We systematically examine the contact resistivity and intrinsic channel mobility, and show that chemically increasing the injecting electrode work function significantly improves hole injection relative to untreated Au electrodes.

Current distribution effects in organic sexithiophene field effect transistors investigated by lock-in thermography: Mobility evaluation issues Appl. Phys. Lett. 93, 243504 (2008); 10.1063/1.3049613Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors Temperature and electric-field dependence of the mobility of a single-grain pentacene field-effect transistor