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Alloying elements have great influence on mechanical properties of metals. Combining dislocation characterization and in-situ transmission electron microscope straining at ambient and liquid-nitrogen temperature in high-purity titanium and Ti-5at%Al, we investigated the modulation of Al on dislocation behaviours as temperature changed. It reveals that segregation of Al at edge dislocation cores in Ti-5at%Al generates strong obstacles, promoting room temperature cross-slips. However, the effect of Al on reducing stacking-fault energy (SFE) as decreasing temperature is significant. Consequently, the lower SFE in Ti-5at%Al results in ordinary planar dislocation slip while massive dislocation cross-slips occurred in Ti at liquid-nitrogen temperature.

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A•cm -2 ), 使得器件可以获得较大的扩散系数(D n ＝28.80 μm 2 •ms -1 )和载流子扩散长度(L＝21.41 μm), 有利于电荷的传输. 当 CV 循环次数大于 40 次时, PEDOT 薄膜会在掺氟的 SnO 2 透明导电玻璃(FTO)表面发生溶 解、脱附, 从而使得其光电催化性能下降. 在双面光照条件下, 以电沉积 PEDOT 作为透明对电极的器件光电性能提升 了 20%左右.

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