Up to now the basic theoretical description of charge extraction by linearly increasing voltage ͑CELIV͒ is solved for a low conductivity approximation only. Here we present the full analytical solution, thus generalize the theoretical framework for this method. We compare the analytical solution and the approximated theory, showing that especially for typical organic solar cell materials the latter approach has a very limited validity. Photo-CELIV measurements on poly͑3-hexyl thiophene-2,5-diyl͒:͓6,6͔-phenyl-C 61 butyric acid methyl ester based solar cells were then evaluated by fitting the current transients to the analytical solution. We found that the fit results are in a very good agreement with the experimental observations, if ambipolar transport is taken into account, the origin of which we will discuss. Furthermore we present parametric equations for the mobility and the charge carrier density, which can be applied over the entire experimental range of parameters.

A plasmonic modulator is a device that controls the amplitude or phase of propagating plasmons. In a pure plasmonic modulator, the presence or absence of a plasmonic pump wave controls the amplitude of a plasmonic probe wave through a channel. This control has to be mediated by an interaction between disparate plasmonic waves, typically requiring the integration of a nonlinear material. In this work, we demonstrate a 2D semiconductor nonlinear plasmonic modulator based on a WSe 2 monolayer integrated on top of a lithographically defined metallic waveguide. We utilize the strong interaction between the surface plasmon polaritons (SPPs) and excitons in the WSe 2 to give a 73 % change in transmission through the device. We demonstrate control of the propagating SPPs using both optical and SPP pumps, realizing a 2D semiconductor nonlinear plasmonic modulator, with an ultrafast response time of 290 fs.

Empirical data for the fill factor as a function of charge carrier mobility for two different polymer:fullerene systems is presented and analyzed. The results indicate that charge extraction depth limitations and space charge effects are inconsistent with the observed behavior, and the decrease in the fill factor is, instead, attributed to the field-dependent charge separation and geminate recombination. A solar cell photocurrent limited by the Onsager-Braun charge transfer exciton dissociation is shown to be able to accommodate the experimental observations. Charge dissociation limited solar cells always benefit from increased mobilities, and the negative contribution from the reduced charge separation is shown to be much more important for the fill factor in these material systems than any adverse effects from charge carrier extraction depth limitations or space charge effects due to unbalanced mobilities. The logarithmic dependence of the fill factor on the mobility for such a process is also shown to imply that simply increasing the mobilities is an impractical way to reach very high fill factors under these conditions since unrealistically high mobilities are required. A more controlled morphology is, instead, argued to be necessary for high performance.

MoSe2–WSe2 heterostructures host strongly bound interlayer excitons (IXs), which exhibit bright photoluminescence (PL) when the twist angle is near 0° or 60°. Over the past several years, there have been numerous reports on the optical response of these heterostructures but no unifying model to understand the dynamics of IXs and their temperature dependence. Here we perform a comprehensive study of the temperature, excitation power, and time-dependent PL of IXs. We observe a significant decrease in PL intensity above a transition temperature that we attribute to a transition from localized to delocalized IXs. Astoundingly, we find a simple inverse relationship between the IX PL energy and the transition temperature, which exhibits opposite power-dependent behaviors for near 0° and 60° samples. We conclude that this temperature dependence is a result of IX–IX exchange interactions, whose effect is suppressed by the moiré potential trapping IXs at low temperature.

The development of earth abundant materials for optoelectronics and photovoltaics promises improvements in sustainability and scalability. Recent studies have further demonstrated enhanced material efficiency through the superior light management of novel nanoscale geometries such as the nanowire. Here we show that an industry standard epitaxy technique can be used to fabricate high quality II-V nanowires (1D) and nanoplatelets (2D) of the earth abundant semiconductor Zn3As2. We go on to establish the optoelectronic potential of this material by demonstrating efficient photoemission and detection at 1.0 eV, an energy which is significant to the fields of both photovoltaics and optical telecommunications. Through dynamical spectroscopy this superior performance is found to arise from a low rate of surface recombination combined with a high rate of radiative recombination. These results introduce nanostructured Zn3As2 as a high quality optoelectronic material ready for device exploration.