While DRAM cannot easily scale below a 20nm technology node, RRAM suffers far less from scalability issues. Moreover, RRAM’s resistivity enables its use for processing-in-memory (PIM), potentially alleviating the von Neumann bottleneck. Unfortunately, because of technological idiosyncrasies, existing DRAM-centric memory controllers cannot exploit the full potential of RRAM. In this paper, we present the design of a memory controller called CONCEPT. The controller is optimized to exploit unique properties of RRAM to enhance its performance and energy efficiency as well as exploiting RRAM’s PIM capability. We show that with CONCEPT, RRAM can achieve DRAM-like performance and energy efficiency on SPEC CPU 2006 benchmarks. Furthermore, using RRAM PIM capabilities, we show a 5X performance gain on a data-intensive in-memory database workload compared to a state-of-the-art CPU-memory computing model.
Currently, data-intensive applications are gaining popularity. Together with this trend, processing-in-memory (PIM)–based systems are being given more attention and have become more relevant. This article describes an analytical modeling tool called Bitlet that can be used in a parameterized fashion to estimate the performance and power/energy of a PIM-based system and, thereby, assess the affinity of workloads for PIM as opposed to traditional computing. The tool uncovers interesting trade-offs between, mainly, the PIM computation complexity (cycles required to perform a computation through PIM), the amount of memory used for PIM, the system memory bandwidth, and the data transfer size. Despite its simplicity, the model reveals new insights when applied to real-life examples. The model is demonstrated for several synthetic examples and then applied to explore the influence of different parameters on two systems — IMAGING and FloatPIM. Based on the demonstrations, insights about PIM and its combination with a CPU are provided.
The emerging spin-transfer torque magnetic tunnel junction (STT-MTJ) technology exhibits interesting stochastic behavior combined with small area and low operation energy. It is, therefore, a promising technology for security applications, specifically the generation of random numbers. In this paper, STT-MTJ is used to construct an asynchronous true random number generator (TRNG) with low power and a high entropy rate. The asynchronous design enables the decoupling of the random number generation from the system clock, allowing it to be embedded in low-power devices. The proposed TRNG is evaluated by a numerical simulation, using the Landau-Lifshitz-Gilbert (LLG) equation as the model of the STT-MTJ devices. Design considerations, attack analysis, and process variation are discussed and evaluated. We show that our design is robust to process variation, thus achieving an entropy generating rate between 99.7 and 127.8 Mb/s with 6-7.7 pJ per bit for 90% of the instances.
While DRAM cannot easily scale below a 20-nm technology node, RRAM suffers far less from scalability issues. Moreover, RRAM's resistivity enables its use for processing-in-memory (PIM), potentially alleviating the von Neumann bottleneck. Unfortunately, because of technological idiosyncrasies, existing DRAM-centric memory controllers cannot exploit the full potential of resistive RAM (RRAM). In this paper, we present the design of a memory controller called CONCEPT. The controller is optimized to exploit unique properties of RRAM to enhance its performance and energy efficiency as well as exploiting RRAM's PIM capability. We show that with CONCEPT, RRAM can achieve DRAM-like performance and energy efficiency on SPEC CPU 2006 benchmarks. Furthermore, using RRAM PIM capabilities, we show a 5Â performance gain on a data-intensive in-memory database workload compared to a state-of-the-art CPU-memory computing model. & THE PROCESS TECHNOLOGY scaling of DRAM has so far facilitated low cost-per-bit by enabling reduction in cell size. However, further scaling has proven to be costly due to physical factors, such as the difficulty of fabricating capacitors
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