Terahertz quantum cascade lasers (QCLs) are excellent coherent light sources, but are still limited to an operating temperature below 200 K. To tackle this, we analyze the influence of the barrier height for the identical three-well terahertz QCL layer sequence by comparing different aluminum concentrations (x = 0.12–0.24) in the GaAs/AlxGa1-xAs material system, and then we present an optimized structure based on these findings. Electron injection and extraction mechanisms as well as LO-phonon depopulation processes play crucial roles in the efficient operation of these lasers and are investigated in this study. Experimental results of the barrier height study show the highest operating temperature of 186.5 K for the structure with 21% aluminum barriers, with a record kBTmax/ℏω value of 1.36 for a three-well active region design. An optimized heterostructure with 21% aluminum concentration and reduced cavity waveguide losses is designed and enables a record operating temperature of 196 K for a 3.8 THz QCL.

Ring resonators are an interesting alternative cavity solution to the commonly used ridge-type waveguide for terahertz (THz) quantum cascade lasers. They either support a standing-wave pattern showing spatial hole burning if there are defects implemented or a traveling mode in a defect-free cavity. Here, we report on ring-shaped THz quantum cascade lasers emitting between 3.2 and 4.1 THz operating in four different emission regimes. The presence of defects in the cavities force the THz quantum cascade laser into a standing-wave pattern. The measurements show a complex behavior highlighting the effect of strong confinement and the optical nonlinearities leading to the generation of a harmonic state, as well as to a fundamental comb, exhibiting over 30 equidistant modes and covering a bandwidth of 622 GHz. The results are explained by numerical calculations based on the Maxwell–Bloch formalism, including the linewidth enhancement factor and reflection points. The compact geometry and high output power (4 mW detected) make these devices extremely appealing for on-chip frequency comb applications in the terahertz region.

Spectral fingerprints of molecules are mostly accessible in the terahertz (THz) and mid-infrared ranges, such that efficient molecular-detection technologies rely on broadband coherent light sources at such frequencies. If THz Quantum Cascade Lasers can achieve octave-spanning bandwidth, their tunability and wavelength selectivity are often constrained by the geometry of their cavity. Here we introduce an adaptive control scheme for the generation of THz light in Quantum Cascade Random Lasers, whose emission spectra are reshaped by applying an optical field that restructures the permittivity of the active medium. Using a spatial light modulator combined with an optimization procedure, a beam in the near infrared (NIR) is spatially patterned to transform an initially multi-mode THz random laser into a tunable single-mode source. Moreover, we show that local NIR illumination can be used to spatially sense complex near-field interactions amongst modes. Our approach provides access to new degrees of freedom that can be harnessed to create broadly-tunable sources with interesting potential for applications like self-referenced spectroscopy.

We demonstrate terahertz quantum cascade lasers realized in “ideal” ring resonators without discontinuities from, e.g., contacting pads. We realize this by mounting rings episide-down on a silicon substrate by a die-bonding technique. This technique allows one to realize ideal conditions for optical confinement as well as heat dissipation and provides the basis for future Si integrated THz devices. The lasers emit light around 3.8 THz and show much reduced threshold current densities. When operated in continuous-wave operation, frequency comb formation with a spectral bandwidth of 70 GHz is observed. Frequency comb operation is indicated by a narrow beat note signal at 8.55 GHz with a signal-to-noise ratio up to 40 dB. The experimentally measured spectral behavior of ring devices is described accurately by the results obtained from numerical simulations based on the Maxwell–Bloch formalism.

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