We report on the laser damage resistance of ion beam-sputtered oxide materials (Al2O3, Nb2O5, HfO2, SiO2, Ta2O5, ZrO2) and mixtures of Al2O3-SiO2, Nb2O5-SiO2, HfO2-SiO2, Ta2O5-SiO2, and ZrO2-SiO2, irradiated by single 500 fs pulses at 1030 nm. Laser-induced damage threshold (LIDT), refractive index, and bandgaps of the single-layer coatings are measured. For pure oxide materials a linear evolution of the LIDT with bandgap is observed. The results are in accordance with our simulations based on photo-ionization and avalanche-ionization. In the case of mixtures, however, deviations from the previous behaviors are evidenced. The evolution of the LIDT as a function of the refractive index is analyzed, and an empirical description of the relation between refractive index and LIDT is proposed.

A laser damage test facility delivering pulses from 100 fs to 3 ps and designed to operate at 1030 nm is presented. The different details of its implementation and performances are given. The originality of this system relies the online damage detection system based on Nomarski microscopy and the use of a non-conventional energy detection method based on the utilization of a cooled CCD that offers the possibility to obtain the laser induced damage threshold (LIDT) with high accuracy. Applications of this instrument to study thin films under laser irradiation are presented. Particularly the deterministic behavior of the sub-picosecond damage is investigated in the case of fused silica and oxide films. It is demonstrated that the transition of 0-1 damage probability is very sharp and the LIDT is perfectly deterministic at few hundreds of femtoseconds. The damage process in dielectric materials being the results of electronic processes, specific information such as the material bandgap is needed for the interpretation of results and applications of scaling laws. A review of the different approaches for the estimation of the absorption gap of optical dielectric coatings is conducted and the results given by the different methods are compared and discussed. The LIDT and gap of several oxide materials are then measured with the presented instrument: Al(2)O(3), Nb(2)O(5), HfO(2), SiO(2), Ta(2)O(5), and ZrO(2). The obtained relation between the LIDT and gap at 1030 nm confirms the linear evolution of the threshold with the bandgap that exists at 800 nm, and our work expands the number of tested materials.