Benoit Mongellaz scite author profile

This paper presents a method to develop stressed behavioral models of MOSFET and an analogue block : Operational Transconductance Amplifier: Our approach is based on an experimental case study of CA1OS technology ageing That implies experimental tests to ev-aluate electrical ageing effects on MOSFET. The expeIrimental data set is used to build a fMOSFET device ageing I IDL-AM1S model that is included in an OTA I HDIL-AM1S model to define a stressed behaivioral model of the amplifier.

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Ageing simulation of MOSFET circuit using a VHDL-AMS behavioural modelling: an experimental case study

Mongellaz

Fabert

Danto

2003

Microelectronics Reliability

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Improvement of ageing simulation of electronic circuits based on behavioural modelling

Fabert¹,

Mongellaz²,

Bestory³

et al.

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