A versatile fabrication approach for the realization of complex vertical nanowire architectures on top of photolithographically patterned microscale metallic electrodes is presented (see image). Anodic aluminum oxidation combined with microfabrication and nanopatterning techniques enable site‐specific electrochemical growth of nanowires inside supported nanoporous alumina templates.

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It was experimentally demonstrated that bonding strength strongly depends on the total SiO 2 thickness near the bonding interface for a given O 2 plasma surface activation. Systematic experiments of Si/ SiO 2 and SiO 2 /SiO 2 wafer bonding are performed for analyzing the evolution of the bonding surface energy with the interfacial oxide thickness. Optimum plasma exposure time increases with the interfacial SiO 2 thickness to achieve the maximum bonding strength in SiO 2 / SiO 2 or SiO 2 /Si. An optimal process option for plasma activated SiO 2 /SiO 2 wafer bonding is proposed.

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