In this work, we report the manifestations of carrier-dopant exchange interactions in colloidal Mn(2+)-doped CdSe/CdS core/multishell quantum wells. The carrier-magnetic ion exchange interaction effects are tunable through wave function engineering. In our quantum well heterostructures, manganese was incorporated by growing a Cd0.985Mn0.015S monolayer shell on undoped CdSe nanoplatelets using the colloidal atomic layer deposition technique. Unlike previously synthesized Mn(2+)-doped colloidal nanostructures, the location of the Mn ions was controlled with atomic layer precision in our heterostructures. This is realized by controlling the spatial overlap between the carrier wave functions with the manganese ions by adjusting the location, composition, and number of the CdSe, Cd1-xMnxS, and CdS layers. The photoluminescence quantum yield of our magnetic heterostructures was found to be as high as 20% at room temperature with a narrow photoluminescence bandwidth of ∼22 nm. Our colloidal quantum wells, which exhibit magneto-optical properties analogous to those of epitaxially grown quantum wells, offer new opportunities for solution-processed spin-based semiconductor devices.

In this paper, we propose a facile route to fabricate a metal insulator multilayer stack to obtain ultra-broadband, wide angle behavior from the structure. The absorber, which covers near infrared (NIR) and visible (Vis) ranges, consists of a metal-insulator-metal-insulator (MIMI) multilayer where the middle metal layer has a variant thickness. It is found that this non-uniform thickness of the metal provides us with an absorption that is much broader compared to planar architecture. In the non-uniform case, each thickness is responsible for a specific wavelength range where the overall absorption is the superposition of these resonant responses and consequently a broad, perfect light absorption is attained. We first numerically examine the impact of different geometries on the overall light absorption property of the multilayer design. Afterward, we fabricate the designs and characterize them to experimentally verify our numerical findings. Characterizations show a good agreement with numerical results where the optimum absorption bandwidth for planar design is found to be 620 nm (380 nm–1000 nm) and it is significantly boosted to an amount of 1060 nm (350 nm–1410 nm) for multi-thickness case.

In this paper, we demonstrate a facile, lithography free, and large scale compatible fabrication route to synthesize an ultra-broadband wide angle perfect absorber based on metal-insulator-metal-insulator (MIMI) stack design. We first conduct a simulation and theoretical modeling approach to study the impact of different geometries in overall stack absorption. Then, a Pt-Al2O3 multilayer is fabricated using a single atomic layer deposition (ALD) step that offers high repeatability and simplicity in the fabrication step. In the best case, we get an absorption bandwidth (BW) of 600 nm covering a range of 400 nm–1000 nm. A substantial improvement in the absorption BW is attained by incorporating a plasmonic design into the middle Pt layer. Our characterization results demonstrate that the best configuration can have absorption over 0.9 covering a wavelength span of 400 nm–1490 nm with a BW that is 1.8 times broader compared to that of planar design. On the other side, the proposed structure retains its absorption high at angles as wide as 70°. The results presented here can serve as a beacon for future performance enhanced multilayer designs where a simple fabrication step can boost the overall device response without changing its overall thickness and fabrication simplicity.

gration atop electronic substrates (e.g., using dip coating, spin coating and drop casting), where lattice mismatch problems do not arise. Therefore, these NCs are promising candidates for applications in diverse areas, such as in light-emitting diodes, [ 3 ] solar cells, [ 4 ] and photodetectors [ 5 ] as well as for biolabeling [ 6 ] and biosensing. [ 7 ] Conventional photodetectors using NCs typically operate on the principle of collecting photogenerated charges, where an external bias must be applied for the charge collection. Although photodetectors comprising a Shockley-Schottky barrier can in principle be operated without an applied bias (in the open circuit mode), this would commonly come at the cost of decreasing the sensitivity. Recent research efforts increasingly focus on NC photodetectors that show a remarkable level of sensitivity [ 8 ] and short response times. [ 9 ] These photodetectors do, however, rely on photocurrent collection and commonly exhibit high dark current, which results in high noise levels and limits the device's detection capabilities. [ 10 ] As an alternative photosensor architecture, NC skins offer the potential of high sensitivity for large-area applications because they operate on the principle of photogenerated voltage buildup in the absence of an external bias. With a single NC layer in the device structure, noise generation is signifi cantly reduced, which enhances the device sensitivity. [

We proposed and demonstrated the first account of large-area, semi-transparent, tandem photosensitive nanocrystal skins (PNSs) constructed on flexible substrates operating on the principle of photogenerated potential buildup, which avoid the need for applying an external bias and circumvent the current-matching limitation between junctions. We successfully fabricated and operated the tandem PNSs composed of single monolayers of colloidal water-soluble CdTe and CdHgTe nanocrystals (NCs) in adjacent junctions on a Kapton polymer tape. Owing to the usage of a single NC layer in each junction, noise generation was significantly reduced while keeping the resulting PNS films considerably transparent. In each junction, photogenerated excitons are dissociated at the interface of the semi-transparent Al electrode and the NC layer, with holes migrating to the contact electrode and electrons trapped in the NCs. As a result, the tandem PNSs lead to an open-circuit photovoltage buildup equal to the sum of those of the two single junctions, exhibiting a total voltage buildup of 128.4 mV at an excitation intensity of 75.8 μW cm(-2) at 350 nm. Furthermore, we showed that these flexible PNSs could be bent over 3.5 mm radius of curvature and cut out in arbitrary shapes without damaging the operation of individual parts and without introducing any significant loss in the total sensitivity. These findings indicate that the NC skins are promising as building blocks to make low-cost, flexible, large-area UV/visible sensing platforms with highly efficient full-spectrum conversion.