A. ?I[. JEAX-LOCIS et al.: Propriktks des alliages InSbl-,Bi, (I[) 341 phys. stat. sol. 31, 341 (1969) Subject classification: 20.1; 13.1; 22.2.4 Centre National #Etudes des Te'ldcommunications, Issy-les-,~~oulineaux ( a ) et Institut Polytechnique de Mexico ( b ) Propribtbs des alliages InSbl,Bi, 11. Absorption optiquel) Par A. M. JEAN-LOUIS (a), B. AYRAULT (a) et J. VARGAS~) (b) Nons avons mesurk a diffkrentes ternpkratures, I'absorption optique d'alliages semiconducteurs lnSb1 -,Biz. Les corrections usnelles dues & l'absorption par porteurs libres e t A, l'effet Burstein, permettent d'en dkduire l'hergie de bande interdite. Les rbsultats sont en excellent accord avec ceux dkduits des mesiires d'effet Hall (article prkckdent) et montrent une dkcroissance AEc;/Ax de 3,6 eV par mole. La variation de EG( T ) est linkaire pour T 2 80 O K et le coefficient de tempkrature y = -AE,/AT dkcroit avec la concentration en bismuth. -L'introduction de Bi dans le rkseau d'InSb conduit donc Q la dkcroissance de EG et de y . Ces effets sont similaires a ceiix mis en Bvidence globalement dans les composes Ill-V quand le poids atomiqne des constituants augmente.Taking into account the usual corrections (free carriers absorption and Burstein shift), the optical gap has been deduced from optical absorption measurements for several compounds InSbl -%Biz. a t various temperatures. The decrease of the gap is about 3.6 eV per mole: this value is In good agreement with the one deduced from Hall effect measurements (preceding paper). The temperature variation of the gap is linear for T 2 80 O K and the coefficient y = -AEa/AT has been found to decrease with increasing Bi content. The introduction of bismuth in the InSb lattice leads t o the decrease both of EG and y , as observed generally in 111-V compounds, when the atomic weight of the components increases.
H. LANGLOIS et al. : Pouvoir rotatoire du cinabre (a-HgS) 821 phys. stat. sol. (b) 60, 821 (1973) Subject classification: 20.1; 13.1; 22.4.1 Centre National d'Etudes des TLliconzmunications, Bagneux ( a ) et Lannion (b) Pouvoir rotatoire du cinabre (a-HgS) Par H. LANGLOIS (a), B. AYRAULT (a), F. LEFIN (a) et Y. TOUDIC (b) Le pouvoir rotatoire du cinabre a 8th mesurh entre la bande interdite (1 x 0,6 pm) et 1 = 1 pm iL 300, 196,77,20 et 4 K. L'analyse des resultats montre que la dispersion rotatoire est mieux dhcrite par la formule de Drude (e = A/(L2 -a:)), dhduite d'un modhle a un oscillateur, que par celle de Chandrasekhar (e = A A2/(A2 -ddduite d'un modale A deux oscillateurs coupl6s. L'Btude en fonction de la temphrature montre qu'une meme transition est responsable de l'absorption fondamentale au voisinage de E, et de la dispersion rotatoire.The rotatory power of cinnabar has been measured between the band gap (1 z 0.6 Fm) and 1 = 1 pm a t 300, 196, 77, 20, and 4 I ( . The dispersion of the optical activity is better accounted for by a Drude formula (e = A / ( P -A:)) deduced from a one oscillator model, than by Chandrasekhar's one (p = A Az/(A2deduced from a two coupled oscillators model. The analysis of the data versus temperature shows that the same transition accounts as well for the absorption near the band gap as for the rotatory dispersion.
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