Reactive ion etching (RIE) is sensitive to changes in chamber conditions, such as wall seasoning, which have a deleterious effect on process reproducibility. The application of real time, closed loop control to RIE may reduce this sensitivity and facilitate production with tighter tolerances. The real-time, closed loop control of plasma density with RF power in a capacitively coupled argon plasma using a hairpin resonance probe as a sensor is described. Elementary control analysis shows that an integral controller provides stable and effective set point tracking and disturbance attenuation. The trade off between performance and robustness may be quantified in terms of one parameter, namely the position of the closed loop pole. Experimental results are presented, which are consistent with the theoretical analysis.

Present practice in plasma-assisted semiconductor manufacturing specifies recipes in terms of inputs such as gas flow rates, power and pressure. However, ostensibly identical chambers running identical recipes may produce very different results. Extensive chamber matching, i.e., initial iterative, empirical tuning of the process recipe, which entails time-consuming, ex situ statistical analysis of process metrics such as etch depth, uniformity, anisotropy and selectivity, is required to ensure acceptable results. Once matched, chambers are run open loop and are thus sensitive to disturbances such as actuator drift, wall seasoning and substrate loading, which may impact negatively on process reproducibility. An alternative approach, which may obviate the need for chamber matching and reduce the sensitivity of process metrics to exogenous disturbances, would be to specify a recipe in terms of quantities such as active species densities, and to regulate these in real time by adjusting the inputs with a suitable control algorithm. In this work, real time control of an electron cyclotron resonance O2/Ar plasma used for photoresist ashing has been implemented. The design of elementary, model-based algorithms for the control of the argon 750 and oxygen 844 line intensities measured by optical emission spectroscopy is described. Fluorination of the chamber walls by means of an SF6 plasma prior to ashing inhibits wall recombination of oxygen radicals resulting in an approximately 20% increase in ash rate in the open loop case. However, closed loop control almost completely attenuates the effect of fluorination, thus demonstrating the efficacy of the control algorithms in ensuring a reproducible ash rate in the face of a wall disturbance.

Closed-loop control of a plasma process for etching applications is discussed in this study. Plasma processes are highly nonlinear systems that typically feature complex chemical and physical reactions. A laboratory-based plasma reactor is presented in this work, and issues concerning its closed-loop control are discussed. A PID controller for the experimental plasma process is developed and its performance is analysed. The need for a more advance control methodology is studied and some appropriate control structures are proposed. Finally, a description of the practical implementation of real-time multivariable closed-loop control for the studied plasma reactor is presented.

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