Among the novel materials for electronic applications and novel device concepts beyond classical Si‐based CMOS technology, SrTiO3 represents a prototype role model for functional oxide materials: It enables resistive switching, but can also form a 2D electron gas at its interface and thus enables tunable transistors. However, the interplay between charge carriers and defects in SrTiO3 is still under debate. Infrared spectroscopy offers the possibility to characterize structural and electronic properties of SrTiO3 in operando, but is hampered by the diffraction‐limited resolution. To overcome this limitation and obtain nanoscale IR spectra of donor‐doped Sr1‐xLaxTiO3 ceramics, scattering‐type scanning near‐field optical microscopy is applied. By exploiting plasmon–phonon coupling, the local electronic properties of doped SrTiO3 are quantified from a detailed spectroscopic analysis in the spectral range of the near‐field ‘phonon resonance’. Single crystal‐like mobility, an increase in charge carrier density N and an increase in ε∞ at grain boundaries (µ≈ 5.7 cm2 V−1s−1, N = 7.1 × 1019 cm−3, and ε∞ = 7.7) and local defects (µ≈ 5.4 cm2 V−1s−1, N = 1.3 × 1020 cm−3, and ε∞ = 8.8) are found. In future, subsurface quantification of defects and free charge carriers at interfaces and filaments in SrTiO3 can be envisioned.

Scattering-type scanning near-field optical microscopy (SNOM) offers the possibility to analyze material properties like strain in crystals at the nanoscale. In this paper we introduce a SNOM setup employing a newly developed tunable broadband laser source with a covered spectral range from 9 µm to 16 µm. This setup allows for the first time optical analyses of the crystal structure of gallium nitride (GaN) at the nanometer scale by excitation of a near-field phonon resonance around 14.5 µm. On the example of an artificially induced stress field within a GaN wafer, we present a method for a 2D visualization of small deviations in the crystal structure, which allows for fast qualitative characterizations. Subsequently, the stress levels at chosen points were quantified by recording complex near-field spectra and correlating them with theoretical model calculations. Applied to the cross-section of a heteroepitaxially grown GaN wafer, we finally demonstrate the capability of our setup to analyze the relaxation of the crystal structure along the growth axis with a nanometer spatial resolution.

We present, to the best of our knowledge, design and performance data of the first diode-pumped Alexandrite ring laser in Q-switched single-longitudinal mode (SLM) operation. The laser resonator contains two Alexandrite crystals, which are pumped longitudinally by means of two laser diode-bar modules emitting at 636 nm. Single-longitudinal mode operation is achieved by seeding the laser with a diode laser operating in SLM and actively stabilizing the cavity, yielding a linewidth of < 10 MHz at the potassium resonance line at 770 nm. The pulse energy is 1 mJ at a repetition rate of 150 Hz and 0.65 mJ at 320 Hz. The beam quality of M < 1.2 in both directions remains unchanged for the different repetition rates. After characterization in the laboratory, the laser was implemented in a novel mobile lidar system and first atmospheric measurements were conducted successfully.

Optical parametric chirped-pulse amplifiers with high average power are possible with novel high-power Yb:YAG amplifiers with kW-level output powers. We demonstrate a compact wavelength-tunable sub-30-fs amplifier with 11.4 W average power with 20.7% pump-to-signal conversion efficiency. For parametric amplification, a beta-barium borate crystal is pumped by a 140 W, 1 ps Yb:YAG InnoSlab amplifier at 3.25 MHz repetition rate. The broadband seed is generated via supercontinuum generation in a YAG crystal.

To use the full potential of composite parts, e.g., to reduce the structural weight of cars or airplanes, a greater focus is needed on the joining technology. Adhesive bonding is considered favorable, superior joining technology for these parts. Unfortunately, to provide a structural and durable bond, a surface pre-treatment is necessary. Due to its high integration potential in industrial process chains, laser radiation can be a very efficient tool for this purpose. Within the BMBF-funded (German Federal Ministry of Education and Research) project GEWOL, a laser source that emits radiation at 3 µm wavelength (which shows significant advantages in theory) was developed for a sensitive laser-based bonding pre-treatment. Within the presented study, the developed laser source was compared with conventional laser sources emitting radiation at 355 nm, 1064 nm, and 10,600 nm in terms of application for a composite bonding pre-treatment. With the different laser sources, composites were treated, analytically tested, subsequently bonded, and mechanically tested to determine the bonding ability of the treated specimens. The results show a sensitive treatment of the surface with the developed laser source, which resulted in a very effective cleaning, high bonding strengths (over 32 MPa), and a good effectiveness compared with the conventional laser sources.