With the direct measurement of the quantum oscillatory magnetization M of a two-dimensional electron system (2DES) in an InGaAs/InP asymmetric quantum well we discover a frequency anomaly of the de Haas-van Alphen effect which is not consistent with existing theories on spin-orbit interaction (SOI). Strikingly, the oscillatory magnetoresistance of the same heterostructure, that is, the Shubnikov-de Haas effect conventionally used to explore SOI, does not show the frequency anomaly. This explains why our finding has not been reported for almost three decades. The understanding of the ground state energy of a 2DES is evidenced to be incomplete when SOI is present.

No abstract

We have studied experimentally the nonequilibrium currents ͑NECs͒ induced by sweeping either the magnetic field B or the carrier density n S of a two-dimensional electron system ͑2DES͒. The gated 2DES resided in a modulation-doped GaAs/ Al x Ga 1−x As heterostructure and was integrated into a micromechanical cantilever. The NECs provoke a magnetic moment which we have detected via torque magnetometry down to 300 mK. Additional electrical leads allowed for simultaneous magnetotransport measurements. We find a hysteretic behavior of the NECs and a striking asymmetry of the corresponding magnetic moment around integer filling factors = hn S / eB. Surprisingly, the shape of the hysteresis loops is the same for sweeps of B or n S if plotted versus . In a certain parameter regime each NEC signal exhibits a characteristic slope which is found to depend only on the filling factor at large B or n S . Based on a model considering capacitive coupling between 2DES and gate we attribute the slopes to the conductance quantization of the quantum Hall effect. The NECs are found to be limited by the time-dependent buildup of the radial Hall field governed by the gate capacitance. These findings are in contrast to a floating 2DES without a gate where the breakdown of the quantum Hall effect was previously reported to limit the NECs. Our model also explains the observed shape and dependence on temperature as well as sweep rate. The in situ measurement of the longitudinal resistance allows us to directly correlate the magnetic behavior with both the magnetic field and temperature-dependent resistance of the 2DES.

For an InAs quantum well which is modulation-doped with Mn we measure directly and simultaneously the magnetization and magnetic anisotropy of, both, the two dimensional hole system (2DHS) and Mn dopants. Using highly sensitive micromechanical torque magnetometry at 400 mK we observe the de Haas-van Alphen effect of the 2DHS in a magnetic field B up to 14 T. Around B=0 we find a magnetic hysteresis which we attribute to the spontaneous ordering of magnetic moments in the interacting Mn-hole system. Tilted field experiments suggest a uniaxial magnetic anisotropy with the easy axis in (001) growth direction.