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This paper describes a high performance bipolar process based on bonded SO1 wafers featuring deep trench isolation, double polysilicon self-alignment, and a substrate-erosion free composite spacer scheme. The process provides transistors with excellent dc and ac parameters. Gate delay times of 19.6 ps, powerdelay products of 8.6 fJ, and 2:l frequency dividers operating up to 22.4 GHz are prominent performance data which are -to the authors knowledge -best values ever reported for SOI-based bipolar technologies.

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