Low temperature PECVD (Plasma Enhanced Chemical Vapour Deposition) deposited SiC thin films are promising materials for development of high temperature working MEMS (Microelectromechanical System) due to their excellent mechanical properties, non-corrosive nature and ability to withstand high temperature. However, the surface roughness of such thin films is the main obstacle to achieve thicker thin films for MEMS applications as the surface more rougher by increasing the thickness of PECVD SiC thin films. Therefore, in this present study, thicker SiC thin films were deposited by PECVD process by using the CH 4 and SiH 4 as the precursor gases in presence of Ar as the carrier gas and two process parameters i.e. RF (Radio Frequency) power with mixed frequency condition and flow ratio of silane to methane were varied by keeping the temperature and pressure constant to investigate the influence of these parameters on the growth rate, surface roughness and morphology of SiC thin films. It was observed that both the RF power (with the mixed frequency condition) and flow ratio of SiH 4 /CH 4 can control the growth rate, surface roughness and morphology of the PECVD SiC thin films. Higher the carbon content in the thin films the surface became more smoother whereas the surface became for rougher by increasing the RF power.