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For the first time, we investigate the temperature effect on AlGaAs/Si based hetero-structure junctionless double gate tunnel field effect transistor. Since junctionless tunnel FET is an alternative substitute device for ultra scaled deep-submicron CMOS technology, having very good device characteristics such as an improved subthreshold slope (< 60 mV/decade at 300 K) and very small static leakage currents. The improved subthreshold slope and static leakage current confirms that it will be helpful for the development of future low power switching circuits. The 2-D computer based simulation results show that OFF-state leakage current is almost temperature independent for the proposed device structure.

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We have investigated the electronic properties of WTe 2 armchair nanoribbons with defects. WTe 2 nanoribbons can be categorized depending on the edge structure in two types: armchair and zigzag. WTe 2 in its bulk form has an indirect band gap but nanoribbons and nanosheets of WTe 2 have direct band gaps. Interestingly, the zigzag nanoribbon is metallic while the armchair nanoribbons are semiconducting. Thus they can find applications in device fabrication. Therefore, it is very important to study the effect of defects on the electronic properties of the armchair nanoribbons as these defects can impair the device properties and characteristics. We have considered defects such as: vacancy, rough edge, wrap, ripple and twist in this work. We report the band gap variation with these defects. We have also studied the change in band gap and total energy with varying degrees of wrap, ripple and twist.