Silicon-based photodetectors in photoelectric sensing applications are crucial. In the previous studies of the piezo-phototronic effect on performance modulation of Si/ZnO heterojunctions, the majority is based on a rigid silicon substrate and a ZnO one-dimensional nanostructure, causing incompatibility with advanced semiconductor processing technology as well as the limitation in the field of wearable application. Here, flexible p-Si/n-ZnO film heterojunction photodetectors have been constructed by sputtering ZnO films on chemically thinned Si substrates. Under 405 nm light illumination and at −0.5 V bias, the reverse photocurrent of the heterojunction under the −0.73‰ compression strain increased by 50.36% compared to that under a strain-free state, while the reverse photocurrent for the same device under 0.73‰ tensile strain decreased by 29.2% compared to that under the strain-free state. The introduction of a flexible silicon wafer realizes a bidirectional photocurrent response regulation, which lies in the fact that the strain-induced piezo-potential governs the local energy band structure at the heterojunction interface and, thus, influences the carrier transport in the heterojunction region. The COMSOL simulation results further verify the evolution of the energy band structure at the heterojunction interface at different strain states. This work provides a strategy to design silicon-based optoelectronic devices via the piezo-phototronic effect of a ZnO film.

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