Silicon carbide (SiC) is a wide bandgap semiconductor which exhibits outstanding mechanical, chemical properties, and potential for a wide range of applications. Laser technology is being established as an indispensable powerful tool to induce structural or morphological modifications on hard brittle materials. SiC (6H-SiC wafer) is irradiated by nanosecond pulsed Nd:YAG laser to evaluate microstructure and mechanical properties of irradiation areas. Raman spectroscopy analysis reveals that irradiations produce homonuclear Si-Si bonds and disordered phase of crystalline SiC. Crystal structure changes are observed as a consequence of laser-induced melting and resolidification. Hardness in the irradiation area exhibits a significant decrease. The formation of silicon film facilitates material removal rate, surface electrical conductivity, and ceramics conjunction.