The [rrst Floating Gate Transistor (metal insulator-metal-insulator structure) was proposed by Kahng and Sze in 1967 [I]. Using the floating gate voltage value, capacitive coupling coefficients can be found out at different bias conditions as required. Once these have been found out for a particular technology, the values of the capacitances can be found out and implemented in the given model. The charge present on the gate has to be calculated using the transient models of hot electron programming and Fowler nordheim tunn eling. These can be incorporated and thus the model can be extended to the transient conditions as weU. The SPICE equivalent model is designed and Curr ent Voltage characteristics and Transfer characteristics are comparatively analyzed.

No abstract

No abstract

No abstract

The latest trends in the digital design circuits are based on Quantum Dot based structures. The Quantum-dot Cellular automata is paradigm in the area of Nano chip design in terms of their size and low power, which plays a significant role in the Nano electronic industry. This paper presents a novel robust design of LFSR which consumes lesser power than conventional design which is restructured using QCA based XOR gate and D Flip Flop. The simulation of the proposed design were done using coherence engine vector of QCA designer tool. The D flip flop show 41% lesser complexity and power with the single latency. The XOR Gate is designed with 22 QCA Cells and complexity of 0.02 µm 2 and latency of 0.75 cycles as compare to previous design which was having 28 cells. The proposed 4 Bit LFSR is designed using four D flip flops and one XOR gate, further average power dissipation is calculated.