Our three-dimensional organotypic culture revealed that human histone demethylase (KDM) 4C, a histone lysine demethylase, hindered the acini morphogenesis of RWPE-1 prostate cells, suggesting its potential oncogenic role. Knockdown (KD) of KDM4C suppressed cell proliferation, soft agar colony formation, and androgen receptor (AR) transcriptional activity in PCa cells as well as reduced tumor growth of human PCa cells in zebrafish xenotransplantation assay. Micro-Western array (MWA) analysis indicated that KD of KDM4C protein decreased the phosphorylation of AKT, c-Myc, AR, mTOR, PDK1, phospho-PDK1 S241, KDM8, and proteins involved in cell cycle regulators, while it increased the expression of PTEN. Fluorescent microscopy revealed that KDM4C co-localized with AR and c-Myc in the nuclei of PCa cells. Overexpression of either AKT or c-Myc rescued the suppressive effect of KDM4C KD on PCa cell proliferation. Echoing the above findings, the mRNA and protein expression of KDM4C was higher in human prostate tumor tissues as compared to adjacent normal prostate tissues, and higher KDM4C protein expression in prostate tumors correlated to higher protein expression level of AKT and c-Myc. In conclusion, KDM4C promotes the proliferation of PCa cells via activation of c-Myc and AKT.

By using cross-sectional scanning tunneling microscopy, a correlation between the surface morphology and the corresponding electronic states of the dislocations terminated at the GaN(11¯00) cleavage surfaces grown by molecular-beam epitaxy has been demonstrated. Both scanning tunneling spectroscopy and analysis of the dislocations on electronic structures suggest that regions surrounding dislocations register gap states in the fundamental band gap of GaN. Closely examining the recognition of the electronic structure reveals that the defect levels could provide the possibility of yellow luminescence, involving a transition from the conduction-band edge to a level at 1.2 eV above the valence band edge.

Gate-to-drain contact short issue in floating gate memory has been studied. Two cases will be discussed, floating-gate to drain contact short, and control-gate to drain contact short, both caused by leakage bridge defect. The abnormal electrical device characteristic combined with modeling gives further insight into the failure mode. Nano-prober measurement results not only provide an evidence of short-contact issue but also measures the current behaviors between drain and gate in floating gate configuration. These results help to predict the defect location and successfully monitor the bridge-failure through electrical analysis.