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The aim of this paper is to illustrate the N2 plasma treatment for high-κ ZrO2 gate dielectric stack (30 nm) with indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Experimental results reveal that a suitable incorporation of nitrogen atoms could enhance the device performance by eliminating the oxygen vacancies and provide an amorphous surface with better surface roughness. With N2 plasma treated ZrO2 gate, IGZO channel is fabricated by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique. The best performance of the AP-PECVD IGZO TFTs are obtained with 20 W-90 sec N2 plasma treatment with field-effect mobility (μ(FET)) of 22.5 cm2/V-s, subthreshold swing (SS) of 155 mV/dec, and on/off current ratio (I(on)/I(off)) of 1.49 x 10(7).

The development of the next‐generation display technologies requires thin‐film transistors (TFTs) with high mobility and good negative‐bias‐illumination stress (NBIS) stability. Here, a tetravalent‐terbium‐doped indium oxide (Tb:In2O3) semiconductor is reported, which can effectively improve the NBIS stability of the TFT while ensuring high mobility. The TFT with Tb:In2O3 channel layer exhibited remarkable performance with a saturation mobility of 45.0 cm2 V–1 s–1 (with average mobility of 38.6 cm2 V–1 s–1), a turn‐on voltage (Von) of −1.1 V, and an on‐off current ratio of 108. In addition, the Tb:In2O3 TFT showed greatly improved NBIS stability with Von shift (ΔVon) of −3.9 V (with average ΔVon of 4.0 V) under 3600 s stress with −20 V gate voltage and white light illumination (compared to ΔVon of −11.7 V for the pure In2O3 TFT). Comprehensive studies reveal that the effective improvement of NBIS stability after Tb4+ doping is mainly attributed to the wide‐band absorption of the incident blue light by the Tb4f 7—O2p6 to Tb4f 8—O2p5 charge transfer (CT) transition that has smaller overall lattice expansion/contraction and shorter relaxation time compared to VO ionization.