Silica nanowires were rapidly grown at the Pt− Si eutectic temperature (830 °C) through active oxidation. Because a silica source with a high amount of SiO is required for high solubility in a small droplet, we developed a plasma treatment that was conducted on a platinum thin film prior to nanowire growth to incorporate a high amount of silica source into the droplets. After the samples were pretreated with hydrogen and argon plasma, sub-10 nm silica nanowires were successfully grown through 1.8 nm Pt thin films on silicon wafers. This is an effective method to grow thin nanowires on nanopillars with low surface reflection at low temperatures.

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Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique and KrF excimer laser annealing (ELA) were employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO-TFTs). Device with a 150 mJ/cm2 laser annealing densities demonstrated excellent electrical characteristics with improved on/off current ratio of 4.7×107, high channel mobility of 10 cm2/V-s, and low subthreshold swing of 0.15 V/dec. The improvements are attributed to the adjustment of oxygen vacancies in the IGZO channel to an appropriate range of around 28.3% and the reduction of traps at the high-k/IGZO interface.

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HfO 2 is considered a promising gate dielectric material for sub-45 nm CMOS technology. It has been reported that incorporate Al into HfO 2 forming Hf aluminates in order to increase the crystallization temperature. However, the growth of the low-k interfacial layer at high-k/Si interface during high-k dielectric deposition would result in reliability degradation. Recently, incorporating nitrogen into HfAlO x gate dielectrics has beneficial effect on reliability performance. In addition, fluorine incorporation into high-k dielectrics also could have several improvements. In this study, dual plasma (CF 4 pre-treatment and N 2 post-treatment) was performed on HfAlO x MIS capacitor in order to improve interface quality and the reliability properties. According to our experimental results, dual plasma treatment could improve interface quality and enhance reliability properties of HfAlO x thin films.