Abstract-In this paper, a second-order Chebyshev active bandpass filter (BPF) with three finite transmission zeros is presented. The filter utilizes a tapped-inductor feedback technique to compensate resistive losses of on-chip inductors, and a shunt-feedback inductor between input and output ports to achieve the transmission zeros. Moreover, one transmission zero is in the lower stopband, and two transmission zeros are in the upper stopband, thus improving the selectivity of the filter significantly. The filter is designed and fabricated in a standard 0.18-µm CMOS technology with a chip area of 0.57 mm × 0.65 mm including all testing pads. The circuit draws 6 mA from a 0.7-V supply voltage. Additionally, the filter achieves a 1.65-dB insertion loss and 13.2-dB return loss with a 17% 3-dB bandwidth at 23.5 GHz. The measured NF and input P 1 dB is 6.7 dB and −3.5 dBm. The rejection levels at the transmission zeros are greater than 15.2 dB. Finally, the large-signal characterizations are also investigated by the 1-dB compression point (P 1 dB ) of the filter.

This paper presents a miniaturized 10/24-GHz rat-race coupler using synthetic transmission lines on a glass substrate. Compared to a standard CMOS process, the proposed CMOS-compatible glass substrate features lower substrate losses and thicker metal layers. The area-consuming transmission line layouts are implemented by the meandered synthetic transmission lines with high slow-wave factors and low losses. The coupler based on the synthetic TLs is designed, fabricated, and verified. Good agreement between the simulation and measurement is also observed. The chip size is merely 2.5 × 2.2 mm 2 which is comparable to on-chip levels. Keywords: rat-race coupler, transmission line, characteristic impedance slow-wave factor, glass substrate Classification: Microwave and millimeter wave devices, circuits, and systems "Millimeter-wave CMOS design," IEEE J. Solid-State Circuits, vol. 40, no. 1, pp. 144-155, Jan. 2005. [5] S. Sun, J. Shi, L. Zhu, S. C. Rustagi, and K. Mouthaan, "Millimeter-wave bandpass filters by standard 0.18-μm CMOS technology," IEEE Electron Device Lett., vol. 28, no. 3, pp. 220-222, March 2007. [6] C. C. Chen and C. K. C. Tzuang, "Synthetic quasi-TEM meandered transmission lines for compacted microwave integrated circuits," IEEE Trans. References

Abstract-This paper describes a high-gain CMOS low-noise amplifier (LNA) for 2.4/5.2-GHz WLAN applications. The cascode LNA uses an inductor at the common-gate transistor to increase its transconductance equivalently, and therefore it enhances the gain effectively with no additional power consumption. The LNA is matched concurrently at the two frequency bands, and the input/output matching networks are designed with two notch frequencies to shape the frequency response. The dual-band LNA with the common-gate inductor is designed, implemented, and verified in a standard 0.18-µm CMOS process. The fabricated LNA which consumes 7.2 mW features gains of 14.2 dB and 14.6 dB, and noise figures of 4.4 dB and 3.7 dB at the 2.4-GHz and 5.2-GHz frequency bands, respectively. The proposed LNA demonstrates a 4.9-7.8 dB gain enhancement compared to conventional cascode LNAs, and the chip size is 1.06 mm × 0.79 mm including all testing pads.

No abstract

This paper presents a K-band CMOS low-noise amplifier (LNA) incorporating a Q-enhanced notch filter. The third-order notch filter composed of two capacitors and one high-Q inductor is used for low-side interference-rejection (IR). Moreover, the proposed inductor is realized by a tapped-inductor feedback topology to compensate its resistive losses with low-power consumption. The LNA is designed and implemented successfully in a standard 0.18-μm CMOS process. The circuit consumes 10.7 mW with a chip size of 0.6 mm 2 . Measured results demonstrate 10.5-dB gain, 4.7-dB NF, 16-dB input return loss, 13.5-dB output return loss, −10.5-dBm input P 1 dB , and −3.6-dBm IIP3 at 23 GHz, respectively. The circuit also shows a 33.5-dB rejection level at 17.9 GHz.