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We have grown Mn-doped V2VI3 single crystals using the temperature gradient solidification method. We report on the structural and magnetic properties of Mn-doped Bi2Te3, Sb2Te3, Bi2Se3, and Sb2Se3 compound semiconductors. The lattice constants of several percent Mn-doped V2VI3 were slightly smaller than those of the undoped V2VI3 due to the smaller Mn atomic radius (1.40Å) than those of Bi (1.60Å) and Sb (1.45Å). Mn-doped Bi2Te3 and Sb2Te3 had ferromagnetic ordering at TC=10 and 17K, respectively. However, Mn-doped Bi2Se3 and Sb2Se3 showed spin glass and paramagnetic properties, respectively.

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The recent interest in wearable electronics suggests flexible thermoelectrics as candidates for the power supply. Herein, we report a solution process to fabricate flexible Sb2Te3 thermoelectric thin films using molecular Sb2Te3 precursors, synthesized by the reduction of Sb2Te3 powder in ethylenediamine and ethanedithiol with superhydride. The fabricated flexible Sb2Te3 thin films exhibit a power factor of ∼8.5 μW cm–1 K−2 at 423 K, maintaining the properties during 1000 bending cycles. FePt nanoparticles are homogeneously embedded in the Sb2Te3 thin film, reducing the thermal conductivity. The current study offers considerable potential for manufacturing high-performance flexible thin film devices.

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