By employing three different measurement methods, we rigorously show that micron-scale ballistic thermal conduction can be found in Si-Ge heterogeneously interfaced nanowires exhibiting low thermal conductivities. The heterogeneous interfaces localize most high-frequency phonons and suppress the total thermal conductivity below that of Si or Ge. Remarkably, the suppressed thermal conductivity is accompanied with an elongation of phonon mean free paths over 5 μm at room temperature, which is not only more than 25 times longer than that of Si or Ge but also longer than those of the best thermal conductors like diamond or graphene. We estimate that only 0.1% of the excited phonons carry out the heat transfer process, and, unlike phonon transport in Si or Ge, the low-frequency phonons in Si-Ge core-shell nanowires are found to be insensitive to twin boundaries, defects, and local strain. The ballistic thermal conduction persisting over 5 μm, along with the suppressed thermal conductivity, will enable wave engineering of phonons at room temperature and inspire new improvements of thermoelectric devices.

Probing length-dependent thermal conductivity of a given material has been considered as an important experimental method to determine the length of ballistic thermal conduction, or equivalently, the averaged phonon mean free path (l). However, many previous thermal transport measurements have focused on varying the lateral dimensions of samples, rendering the experimental interpretation indirect. Moreover, deducing l is model-dependent in many optical measurement techniques. In addition, finite contact thermal resistances and variations of sample qualities are very likely to obscure the effect in practice, leading to an overestimation of l. We point out that directly investigating one-dimensional length-dependent (normalized) thermal resistance is a better experimental method to determine l. In this regard, we find that no clear experimental data strongly support ballistic thermal conduction of Si or Ge at room temperature. On the other hand, data of both homogeneously-alloyed SiGe nanowires and heterogeneously-interfaced Si-Ge core-shell nanowires provide undisputed evidence for ballistic thermal conduction over several micrometers at room temperature.

Thermal rectification is a special heat transfer phenomenon that thermal conductance of a sample is higher in one direction than that in the reversed direction. Thermal rectifiers have been proposed to be the building blocks of phononic circuits, high performance thermoelectric devices, and energy-saving materials. Theoretically, thermal rectification has been suggested to be ubiquitous, occurring in wherever nonlinear interactions and broken inversion symmetry are present. However, currently available experimental methods have limited sensitivities and are unable to unravel the interesting effect in many systems. Here, by adopting the concept of nonlinear optics, we propose an improved experimental method to detect minuscule thermal rectification from large background thermal conductance. Experimentally, a SiC nanowire, a SiGe nanowire, and a multiwall BN nanotube are investigated and found their thermal rectification is smaller than 0.2% even after asymmetric mass-loading. The method would be very powerful in revealing interesting phonon properties of many materials.